On the Selective Spectral Sensitivity of Oppositely Placed Double-Barrier Structures

The characteristics of an oppositely placed double potential barrier photodetector structure were investigated under longitudinal illumination. functional abilities the silicon n+-p-n+ studied choice impurity concentration in n+- and p- regions provided difference heights barriers near-surface, rear, directed their conjoining high-resistance p-base. widths depletion these varied with a step change bias voltage. redistribution fraction absorption electromagnetic waves between contribution to total photocurrent was investigated. In connection this, short-wavelength (490 nm) long-wavelength (830 spectral maxima formed. voltage range commensurate barriers, inversion sign and, using developed algorithm, distribution absorbed radiation intensity, obtained. A physical explanation results is provided. investigation enables selective registration individual intensities. reported here enable optimistic spectrophotometric outlook for double-barrier photonic structures.